Semiconductor device and method for manufacturing the same

ABSTRACT

A semiconductor device ( 21 ) can include, e.g., a recessed portion ( 25 ) on the reverse surface ( 224 ) of an insulating resin ( 22 ) which is the mounting surface of the semiconductor device ( 21 ). Additionally, on the outer peripheral surface of the recessed portion ( 25 ), the exposed region of leads ( 26 ) and the reverse surface ( 224 ) of the insulating resin ( 22 ) form generally the same plane. This allows, e.g., a QFN semiconductor device ( 21 ) according to preferred embodiments herein to place dust particles in the recessed portion ( 25 ) even in the presence of dust particles such as crushed burr particles of the leads ( 26 ) or plastic burrs, thereby avoiding mounting deficiencies when mounting the semiconductor device.

[0001] This application is a divisional of application Ser. No.10/352,859, filed Jan. 29, 2003, which claims priority to JapanesePatent Application Serial Number JP2002-020297, filed on Jan. 29, 2002,the entire disclosures of which are both incorporated herein byreference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The preferred embodiments of present invention relate to, amongother things, a reverse mounted leadless semiconductor device and, moreparticularly, to a semiconductor device and a method for manufacturingthe same that can be employed to reduce deficiencies caused whenmounting the semiconductor device.

[0004] 2. Description of the Related Art

[0005] The following description sets forth the inventors' knowledge ofrelated art and problems therein and should not be construed as anadmission of knowledge in the prior art. As semiconductor devicecapacities have been increased year-by-year, the number of required leadterminals, which serve as various signal lines, has tended to increase.This tendency has resulted in greater use of semiconductor devices suchas QFP (Quad Flat Package) semiconductor devices having lead terminalsextending from their four sides and QFN (Quad Flat Non-leaded Package)semiconductor devices. For example, one practical example of a methodfor manufacturing a QFP semiconductor device is disclosed in JapaneseUnexamined Patent Publication No. Hei-8-181160.

[0006] Illustrative existing methods for manufacturing a semiconductordevice are now described below with reference to FIGS. 12-15. In thatregard, FIG. 12 is a plan view illustrating a lead frame. FIG. 13 is aperspective view illustrating a mold. And, FIG. 14 is a plan viewillustrating a lead frame after having been encapsulated with plastic.

[0007] First, as shown in FIG. 12, a semiconductor element is mounted,via silver paste serving as a bonding agent, on a stage 2 of a leadframe 1. Although not illustrated, the semiconductor element has aplurality of electrode portions on its surface and is mounted on thestage to be fixedly attached thereto. Thereafter, the electrode portionsare electrically connected to lead terminals 3 using wire bonding.

[0008] As shown in FIG. 13, after the semiconductor element has beenmounted as described above, the lead frame 1 is placed in between anupper mold 7 and a lower mold 8. Thereafter, closing the molds causes acavity to be defined which serves as an injection volume.

[0009] Then, a melted plastic is injected at a predetermined pressuretherein through a pot 10′ of the upper mold 7. The plastic flows intothe cavities of the upper mold 7 and the lower mold 8, filling in acavity 9 via a runner 11, thereby encapsulating the semiconductorelement. Although air exists inside the cavity 9 before the plastic isinjected, the plastic pushes the air out through an air vent at thestage of the plastic penetrates the cavity. Then, the air flows outsidethrough a hole 5 formed in the lead frame 1. The air vent is formed inthe molds 7 and 8 and has a sufficient extent of clearance not to allowthe plastic to pass therethrough.

[0010] After the plastic filled has cooled down and solidified, themolds are opened to take out the lead frame 1. The lead frame at thispoint in time is shown in FIG. 14. In this figure, to clarify the flowpassage of the plastic, portions where the pot and runner were presentat the time of plastic encapsulation are shown with dashed lines. As canbe seen clearly from FIG. 14, the plastic flows into the molds from apot portion 10 that is located at the center of four encapsulationregions through a gate portion 4. This allows the semiconductor elementto be mounted on the stage and part of the lead terminals 3 locatedaround the periphery of the semiconductor element to be covered with theplastic, thereby forming a package 12. Thereafter, joint portions of thelead terminals 3 are cut off, and the separated lead terminals 3 arebent as necessary to thereby complete a QFP semiconductor device.

[0011] Next, FIGS. 15(A) and 15(B) illustrate a QFP semiconductor devicethat has been formed by the same method as that for manufacturing theaforementioned QFN semiconductor device.

[0012]FIG. 15(A) is a cross-sectional view illustrating a semiconductordevice including a lead 15 formed portion. As illustrated, thisbackground semiconductor device is configured such that a semiconductorelement 16 is fixedly attached to an island 14 formed of a Cu frame viaan electrically conductive paste 17 such as silver (hereinafter referredto as Ag) paste. An electrode pad (not shown) of the semiconductorelement 16 is electrically connected to the lead 15 via a thin metalwire 18. In addition, an insulating resin 19, which integrally coversthe semiconductor element 16 and other components, is formed on theisland 14 and the lead 15 made of a Cu frame. Then, the reverse surfaceof the island 14 and the lead 15 is plated for prevention of oxidationand solder wettability. With this structure, for example, the lead 15 ismounted to a mounting substrate (not shown) via solder. At this time,the reverse surface of the semiconductor device is formed to begenerally flush therewith, ensuring that the semiconductor device ismounted on the mounting substrate with stability.

[0013] Now, FIG. 15(B) is a cross-sectional view illustrating asemiconductor device including a lifting lead 13 formed portion. Asillustrated, on the upper surface of the lifting lead 13 exposed on theside surface of the insulating resin 19, plastic burrs 19A are producedcontinuously on the side surface of the insulating resin 19. These burrsare the plastic that has flowed into the air vent portion provided inthe molds and hardened, for example, with a thickness of approximately30 μm.

[0014] As described above, the mounting surface of the semiconductordevice is formed to have generally the same plane as shown in FIG. 15(A)in the background QFN semiconductor device. For this reason, when thesemiconductor device is mounted onto the mounting substrate, mountingdeficiencies are caused by dust particles such as plastic particlesentering in between the substrate and the semiconductor device.

[0015] Furthermore, as described above, in the method for manufacturinga background semiconductor device, the air present in the cavity 9 isdriven towards the end portion of the cavity 9, from which the airpasses outwardly through the air vent provided in the molds, as shown inFIG. 13. However, when the air is pushed out via the air vent, theplastic turns into burrs between the lead frame 1 and the upper mold 7or between the lead frame 1 and the lower mold 8. To cut the package 12out of the lead frame 1, the peripheral portion of the package 12 is cutwhile being fixed. However, as shown in FIG. 15(B), when plastic burrs19A have occurred on this fixed region, especially on the surface of thelifting lead 13, it can be impossible to reliably secure the leads 3. Asa result, on the cutting surface of the plastic formed between the leads3, microcracks can be produced. In subsequent steps, these cracks willturn to be plastic particles, etc., which would induce mountingdeficiencies in the mounting step.

[0016] Furthermore, in the method for manufacturing a backgroundsemiconductor device, the air present in the cavity 9 is driven towardsthe end portion of the cavity 9, from which the air passes the cavity 9outwardly through the air vent provided in the mold 7. However, when theair is pushed out via the air vent, the plastic turns into burrs betweenthe lead frame 1 and the upper mold 7 or between the lead frame 1 andthe lower mold 8. Because the plastic burrs are as thin as approximately30 μm, the plastic burrs are integrated with the package and may remainin the mold when the package is removed from the mold 6. The plasticburrs remaining in the mold may block the passage of air present in thecavity 9 at the time of the subsequent plastic molding. As a result,because the air does not flow outside and thus remains compressed in thecavity 9, such a problem can arise wherein voids and/or unfilled volumesoccur in the package.

[0017] There is a need in the art for improved systems and methods thatovercome the above and/or other problems.

SUMMARY OF THE INVENTION

[0018] The various preferred embodiments of the present inventionsignificantly improve upon existing systems and methods.

[0019] The preferred embodiments of the present invention were developedin view of the aforementioned and/or other problems. A semiconductordevice according to some preferred embodiments includes: at least oneisland; a semiconductor element fixedly attached to a surface of saidisland; a plurality of leads extending from the vicinity of said islandoutwardly and lifting leads extending outwardly from corner portions ofsaid island; and an insulating resin for covering said island, saidsemiconductor element, said leads, and said lifting leads integrally,wherein one end of said leads is exposed generally on the same plane asa reverse surface of said insulating resin, and the reverse surface ofsaid insulating resin has a recessed portion at least at part of aregion surrounded by an exposed surface of said leads.

[0020] Furthermore, the semiconductor device preferably includes thatplastic hardened between said leads exposed on said insulating resin andplastic hardened between said leads exposed on said insulating resin andsaid lifting leads have generally the same thickness as said lead frame.

[0021] Furthermore, the semiconductor device preferably includes thatone end of said leads and one end of said lifting leads have a stampedsurface on a side of the mounting surface of said insulating resin.

[0022] According to other preferred embodiments, a method formanufacturing a semiconductor device includes: preparing a lead framehaving at least one mounting portion including at least an island,leads, and lifting leads, and fixedly attaching a semiconductor elementto the island of said lead frame; forming an insulating resin for eachmounting portion after said semiconductor element is electricallyconnected to said leads via a thin metal wire; and separating saidinsulating resin individually for each mounting portion by cutting saidlead frame, wherein in said forming said insulating resin, said leadframe located at an end portion of said insulating resin is sandwichedwith a plastic encapsulation mold, plastic is filled in the plasticencapsulation mold through an air vent provided on said lead frame, airand plastic are exhausted from the plastic encapsulation mold through anair vent provided on said lead frame, said air vent being located atsaid sandwiched lead frame.

[0023] Furthermore, the semiconductor device preferably includes that onthe reverse surface of the insulating resin which is a mounting surfaceof the semiconductor device, a recessed portion is formed on a regionexcluding the mounting region on the outer peripheral surface on whichleads are exposed. This makes it possible to, for example, significantlyimprove the probability of mounting deficiencies by placing dustparticles in the recessed portion formed region even in the presence ofdust particles such as plastic burrs on the mounting substrate andmounting surface of the semiconductor device when mounting thesemiconductor device.

[0024] Furthermore, the semiconductor device preferably includes thatthe thickness of the lifting leads exposed on the side surface of theinsulating resin and the thickness of the plastic near the lifting leadsare made generally the same. This allows, for example, the uppersurfaces of the lifting leads and the plastic near the leads to begenerally flush with each other, and used as a lead securing region uponcutting the leads. As a result, it is possible to stabilize the cuttingsurface of the leads and the plastic near the leads.

[0025] Furthermore, the semiconductor device preferably includes thatone end of the lifting leads is exposed on the mounting surface of thesemiconductor device. This allows, for example, the mounting area of thesemiconductor device to be increased, thereby providing an increasedmounting strength.

[0026] Furthermore, the semiconductor device preferably includes that anisland is exposed on the surface of the insulating resin opposite to themounting surface of the semiconductor device. This allows, for example,the heat generated by the semiconductor element to be dissipateddirectly outwardly from the island, thereby improving the heatdissipation.

[0027] Furthermore, the manufacturing method of the semiconductor devicepreferably includes that in forming the insulating resin, the plastic isinjected into the cavity and the air and plastic are exhausted from thecavity only through the first air vent substantially formed on the leadframe. This makes it possible, for example, to form the same flatsurface having no projected or recessed portions due to plastic burrs onthe outer peripheral surface formed successively to the side surface ofthe insulating resin.

[0028] Furthermore, the method for manufacturing the semiconductordevice preferably includes that, at the time of cutting the individualsemiconductor devices out of the lead frame, the insulating resin andthe vicinity of the boundary between the insulating resin and the leadsexposed on the side surface of the insulating resin are reliably securedand cut. This allows, for example, for stabilizing the cutting surfaceof the leads and the plastic near the leads. As a result, it is possibleto, for example, prevent microcracks in the plastic located at thecutting surface, prevent plastic dust particles resulting from thegrowth of cracks, and significantly reduce the possibility of mountingdeficiencies of the semiconductor device.

[0029] Furthermore, the method for manufacturing the semiconductordevice preferably includes that the leads, the lifting leads, and theplastic near the leads are cut from the mounting surface of thesemiconductor device. This preferably causes a stamped surface of theleads, the lifting leads, and the plastic to be formed on the side ofthe mounting surface. On the other hand, the burrs of the leads, thelifting leads, and the plastic are preferably formed on the surfaceopposite to the mounting surface. As a result, substantially no or noprojected or recessed portions are preferably formed on the mountingsurface of the semiconductor device, and the mounting accuracy and thestability of the semiconductor device can be improved.

[0030] The above and/or other aspects, features and/or advantages ofvarious embodiments will be further appreciated in view of the followingdescription in conjunction with the accompanying figures. Variousembodiments can include and/or exclude different aspects, featuresand/or advantages where applicable. In addition, various embodiments cancombine one or more aspect or feature of other embodiments whereapplicable. The descriptions of aspects, features and/or advantages ofparticular embodiments should not be construed as limiting otherembodiments or the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying figures are provided by way of example, withoutlimiting the broad scope of the invention or various other embodiments,wherein:

[0032]FIG. 1(A) is an explanatory perspective view and FIG. 1(B) is anexplanatory plan view, illustrating a semiconductor device according tothe present invention;

[0033]FIG. 2(A) is an explanatory cross-sectional view and FIG. 2(B) isan explanatory cross-sectional view, illustrating a semiconductor deviceaccording to the present invention;

[0034]FIG. 3(A) is an explanatory perspective view and FIG. 3(B) is anexplanatory perspective view, illustrating a semiconductor deviceaccording to the present invention;

[0035]FIG. 4 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0036]FIG. 5 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0037]FIG. 6 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0038]FIG. 7 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0039]FIG. 8 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0040]FIG. 9 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0041]FIG. 10 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0042]FIG. 11 is an explanatory view illustrating a method formanufacturing a semiconductor device according to the present invention;

[0043]FIG. 12 is an explanatory view illustrating a method formanufacturing a prior art semiconductor device;

[0044]FIG. 13 is an explanatory view illustrating a method formanufacturing a prior art semiconductor device;

[0045]FIG. 14 is an explanatory view illustrating a method formanufacturing a prior art semiconductor device; and

[0046]FIG. 15(A) is an explanatory cross-sectional view and FIG. 15(B)is an explanatory cross-sectional view, illustrating a prior artsemiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0047] Now, semiconductor devices and methods for manufacturing the sameaccording to some preferred embodiments of the invention will bedescribed below with reference to FIG. 1 through FIG. 11.

[0048] First, referring to FIG. 1 through FIG. 3, a QFN semiconductordevice according to some preferred embodiments is described below.

[0049]FIG. 1(A) is a perspective view illustrating the semiconductordevice according to some embodiments of the present invention. FIG. 1(B)is a plan view illustrating the reverse surface of the semiconductordevice shown in FIG. 1(A). As shown in FIG. 1(A), on the front surfaceof a semiconductor device 21 according to these embodiments, part of anisland 23 and one end 241 of lifting the leads 24 are preferably exposedon a front surface 221 of an insulating resin 22 made of an insulatingplastic forming the package. Additionally, on side surfaces 222 of theinsulating resin 22, one end of the leads 26 is preferably slightlyexposed. Although detailed in a manufacturing method described later,the exposed region is preferably capable of securing the leads 26 with alead cutting jig at the time of cutting the leads 26 from a lead frame41 (see, e.g., FIG. 4). More specifically, the exposed region ispreferably exposed from the insulating resin 22 approximately 50 μmthrough 200 μm. On four corner side surfaces 223 of the insulating resin22 at which the four side surfaces 222 allowing the leads 26 to beexposed thereon intersect each other, the other end 242 of the liftingleads 24 is preferably slightly exposed. In this case, as for the leads26, the exposed region is preferably capable of securing the liftingleads 24 at the time of cutting the lifting leads 24 from the lead frame41. More specifically, the exposed region is also preferably exposedapproximately 50 μm through 200 μm from the insulating resin 22.

[0050] In these embodiments, the island 23 exposed on the front surface221 of the insulating resin 22 can, e.g., improve the heat dissipationgenerated by the semiconductor element. The front surface 221 of theinsulating resin 22, the reverse surface of the island 23, and thereverse surface of the one end 241 of the lifting leads 24 arepreferably located generally on the same plane, thereby realizing thesemiconductor device 21 itself reduced in thickness. The island 23 ispreferably not limited to a particular position but may be located atany position so long as, e.g., a recessed portion 25, described later,can be formed there.

[0051] As shown in FIG. 1(B), the reverse surface of the semiconductordevice 21 according to these embodiments preferably functions as amounting region for the semiconductor device 21. On the outer peripheralportion on a reverse surface 224 of the insulating resin 22, the otherend 242 of the lifting leads 24 and the mounting surface of the one endof the leads 26 (e.g., an abutting surface of the mounting substrate)are preferably exposed so as to be generally flush with the reversesurface 224 of the insulating resin 22. The other end 242 of the liftingleads 24 and the mounting surface of the one end of the leads 26 can bemounted to a mounting substrate (not shown) via a securing material suchas, e.g., solder. Here, the semiconductor device preferably includesthat even the other end 242 of the lifting leads 24 is exposed on thereverse surface 224 of the insulating resin 22. With this structure, themounting area can be increased and the mounting strength can also beimproved. Here, on the reverse surface 224 of the insulating resin 22,the exposed region of the other end 242 of the lifting leads 24 can beplaced around the recessed portion 25, thereby causing it to be locatedoutside the exposed region of the leads 26. This structure thus employedcan mitigate the concentration of the mounting region at the corners ofthe reverse surface 224 of the insulating resin 22. This can alsoprevent the lifting leads 24 and the leads 26, adjacent to each other,from having bridged solder, and thereby allowing the individual leads 26to be electrically connected reliably to the desired electricallyconductive pattern (not shown) on the mounting substrate. Additionally,on the exposed region of the lifting leads 24, when the mounting regionhas a mitigated concentration, it is possible to further improve themounting strength by increasing the exposed region of the lifting leads24. This is because, e.g., the increased exposed region can be fixedlyattached to the electrically conductive pattern of the mountingsubstrate via solder.

[0052] Furthermore, the semiconductor device preferably includes thatthe recessed portion 25 is provided on the reverse surface 224 of theinsulating resin 22. This structure is described below in more detailwith reference to FIGS. 2(A) and 2(B).

[0053]FIG. 2(A) is a cross-sectional view taken along line X-X of FIG.1(A) showing a semiconductor device according some embodiments of thepresent invention. FIG. 2(B) is a cross-sectional view taken along lineY-Y of FIG. 1(A) showing a semiconductor device according to someembodiments of the present invention. First, as shown in FIG. 2(A), thecross-sectional structure of the semiconductor device 21 according tosome embodiments is described below. As described above, the island 23is preferably exposed on the front surface 221 of the insulating resin22 to be generally flush therewith. For example, a semiconductor element28 is preferably fixedly attached to a surface opposite to the exposedsurface of the island 23 via an electrically conductive paste 27 suchas, for example, Ag paste. The electrode pad portion (not shown) of thesemiconductor element 28 can be electrically connected to the leads 26via a thin metal wire 29. One end 262 of the leads 26 is preferablyexposed to be generally flush with the reverse surface 224 of theinsulating resin 22 while the other end 261 of the leads 26 connectingto the thin metal wire 29 is preferably located inside the insulatingresin 22.

[0054] As described above, the semiconductor device preferably includesthat the recessed portion 25 is provided on the reverse surface 224 ofthe insulating resin 22. More specifically, the one end 262 of the leads26 is preferably exposed on the reverse surface 224 of the insulatingresin 22, and the insulating resin 22 itself preferably has a flatsurface in consideration of the stability when mounting thesemiconductor device 21. Inside that region, for example, the recessedportion 25 is preferably formed to occupy approximately two thirds ofthe reverse surface 224 of the insulating resin 22. In this embodiment,the recessed portion 25 is preferably formed to be approximately 10 μmthrough 200 μm in depth, for example. However, the depth of the recessedportion 25 can be freely modified in accordance with, e.g., thethickness of the semiconductor device 21 itself, the position of theisland 23 inside the insulating resin 22, and other use purposes. Withthis structure, when the semiconductor device 21 is mounted on themounting substrate, etc., it is possible to significantly reducemounting deficiencies by forming the recessed portion 25 formed regionin the semiconductor device 21 even in the presence of dust particlessuch as plastic burrs between the semiconductor device 21 and themounting substrate. The recessed portion 25 formed region can be changedas, e.g., the depth thereof or a plurality of recessed portion 25 formedregions may be formed on the reverse surface 224 of the insulating resin22, according to use purposes.

[0055] Then, as shown in FIG. 2(B), the semiconductor device 21according to these embodiments allows the island 23 to be exposed on thefront surface 221 of the insulating resin 22. This can ensure athickness of plastic from the surface of the semiconductor element 28 tothe reverse surface 224 of the insulating resin 22, thus ensuring therecessed portion 25 formed region on the mounting surface of thesemiconductor device 21. In these embodiments, the island 23 can beexposed on the front surface 221 of the insulating resin 22, therebyimproving the heat dissipation generated by the semiconductor element28. Furthermore, in these embodiments, to increase the mounting area ofthe QFN semiconductor device 21, the other end 242 of the lifting leads24 is preferably exposed on the reverse surface 224 of the insulatingresin 22. At this time, as described above, the other end 242 of thelifting leads 24 is preferably also exposed on the reverse surface 224of the insulating resin 22 to improve the mounting strength of thesemiconductor device 21. The corner portions of the insulating resin 22on which the lifting leads 24 are exposed may be short-circuited due tobridged solder resulting from concentrations in the mounting area. Forthis reason, the exposed region of the lifting leads 24 can bedetermined in consideration of the concentrations in the mounting regionwith the leads 26 at the corner portions.

[0056] Although not illustrated, the securing region of the island 23can be plated with silver or gold in consideration of the adherence tothe electrically conductive paste 27. On the other hand, the leads 26can be plated with silver or nickel in consideration of the adherence tothe thin metal wire 29.

[0057] Now, FIG. 3(A) is a perspective view illustrating a portion of asemiconductor device according to some preferred embodiments of thepresent invention. FIG. 3(B) is an enlarged view illustrating a lead ofthe semiconductor device according to some preferred embodiments of thepresent invention. As shown in FIG. 3(A), in practice, plastic isintegrally formed between the ends 262 of the leads 26 exposed on theinsulating resin 22. The plastic is also formed integrally between theone end 262 of the leads 26 and the other end 242 of the lifting leads24. This is because only a limited number of the leads 26 and thelifting leads 24 are exposed on the side surfaces 222 and 223 of theinsulating resin 22, and plastic 22A between the leads 26 and thelifting leads 24 and the leads 26 is integrated with the insulatingresin 22 itself because of the lifting leads 24 and the leads 26themselves having a thickness of, for example, approximately 100 μmthrough 250 μm. The semiconductor device preferably includes that anouter peripheral surface 30 defined by the lifting leads 24, the leads26, and the plastic 22A between the lifting leads 24 and the leads 26has generally the same plane and the same thickness. Although detailedin a manufacturing method described later, this structure can allow alead cutting jig to reliably secure the lifting leads 24 and the leads26 upon cutting the semiconductor device 21 out of the lead frame 41.

[0058] Furthermore, as shown in FIG. 3(B), the semiconductor devicepreferably includes that the one end 262 of the leads 26 has a stampedsurface 32 on the reverse surface 224 of the insulating resin 22, thusallowing burrs 31 of the leads 26 to be produced on the front surface221 of the insulating resin 22. Conversely, the burrs 31 produced on thereverse surface 224 of the insulating resin 22 can be crushed whenmounting the semiconductor device 21 onto the mounting substrate, thecrushed burrs 31 causing mounting deficiencies. Suppose that the burrs31 remain uncrushed. In this latter case, the flatness of the reversesurface 224 of the insulating resin 22 would be degraded, therebyreducing the mounting accuracy and the mounting strength. That is, withthe aforementioned structure, it is possible to provide, e.g., animproved mounting accuracy and mounting strength to the semiconductordevice. As illustrated, the stamped surface 32 has a curved surface. Thesame holds true for the lifting leads 24, and the lifting leads 24 havea similar structure.

[0059] In the foregoing, reference has been made to a QFN semiconductordevice. However, the various embodiments of the present invention arenot limited thereto. Similar effects can be obtained for othersemiconductor devices such as, for example, QFP semiconductor devices.Furthermore, various other modifications can be made without deviatingfrom the spirit and scope of the present invention.

[0060] Now, with reference to FIG. 4 through FIG. 11, a method formanufacturing, e.g., the QFN semiconductor device according to someembodiments of the present invention will be described below. Todescribe the manufacturing method, reference is made to like components,in like figures, designated by the like reference numerals, which havebeen used for describing the aforementioned semiconductor devices.

[0061] As shown in FIG. 4 and FIG. 5, in a first step, a lead frame ispreferably prepared.

[0062]FIG. 4 is a plan view illustrating a lead frame used for thesemiconductor device according to some preferred embodiments of thepresent invention. As illustrated, the lead frame 41 used in theseembodiments is made of a frame, for example, mainly composed of copperand approximately 100 μm through 250 μm in thickness. However, the leadframe may be mainly composed of Fe—Ni or any other metal material. Onthe lead frame 41, there are formed a plurality of mounting portions 42indicating a unit corresponding to one semiconductor device shown by analternate long and short dashed line. In FIG. 4, only four mountingportions 42 are shown. However, at least one mounting portion 42 can beprovided in various embodiments. The mounting portion 42 is preferablysurrounded with a pair of first coupling strips 43 extendingsubstantially horizontally on the page and a pair of second couplingstrips 44 extending substantially vertically on the page. The first andsecond coupling strips 43 and 44 allow a plurality of mounting portions42 to be placed on one lead frame 41.

[0063]FIG. 5 is an enlarged plan view illustrating one mounting portionof the lead frame shown in FIG. 4. More specifically, as illustrated,the mounting portion 42 preferably includes: the island 23; the liftingleads 24 for supporting the island 23; a plurality of the leads 26located near the four sides of the island 23, surrounding the foursides, and extending towards the first and second coupling strips 43 and44; regions 47 located in the direction of extension of the liftingleads 24 and surrounded by the lifting leads 24 and the first and secondcoupling strips 43 and 44; a first air vent 45 and a second air vent 46which are provided on the region 47. In these embodiments, the three airvent formed regions 47 are each provided with the first air vent 45 andthe second air vent 46. These may be, however, provided in at least oneregion 47. On the other hand, at least one plastic injection inlet isrequired. In these embodiments, such is preferably provided at the lowerright corner region 48 where the second air vent 46 is not formed. Theplastic injection inlet does not necessarily have to be provided on thefour corner portions, but the first air vent 45 and the second air vent46 may be formed on each of all the air vent formed regions 47 at allfour corner portions. Additionally, in these embodiments, the two typesof holes provided on the lead frame 41 are defined as the first air vent45 and the second air vent 46, respectively.

[0064] As shown in FIG. 6, in a second step, the semiconductor element28 is preferably die bonded on the island 23 of the lead frame 41. Then,the thin metal wire 29 is preferably wire bonded between the electrodepad portions (not shown) of the semiconductor element 28 and the leads26 are electrically connected therebetween.

[0065] In this step, the semiconductor element 28 is preferably diebonded onto and thereby secured on the surface of the island 23 with theelectrically conductive paste 27 such as, for example, Ag paste for eachmounting portion 42 of the lead frame 41. Thereafter, the electrode padportions of the semiconductor element 28 and the leads 26 can beconnected to each other with the thin metal wire 29. The aforementionedthin wire can be made of Au, for example. At this time of connection ofthe thin metal wire 29 using wire bonding, ball bonding is preferablycarried out on the electrode pad portions and stitch bonding ispreferably carried out on the leads 26. Although not illustrated, theisland 23 may be plated with, for example, silver or gold inconsideration of adherence to the electrically conductive paste. On theother hand, the leads 26 are, for example, plated with silver or nickelin consideration of adherence to the thin metal wire 29. For theadhering means to be used for the semiconductor element 28, adheringmaterial or film made of, e.g., Au—Si foil, a brazing material such assolder or insulating material, according to usage applications, can beemployed.

[0066] As shown in FIG. 7 through FIG. 9, in a third step, theindividual mounting portions on the lead frame are molded of plasticusing a plastic encapsulation mold.

[0067]FIG. 7(A) is a plan view illustrating the inside upper moldaccording to some embodiments. FIG. 7(B) is a cross-sectional viewillustrating a portion of an air vent formed region at the time ofplastic molding. FIG. 7(C) is a cross-sectional view illustrating theplastic injection portion at the gate portion.

[0068] As shown in FIG. 7(A), there is formed an abutting surface 52 tothe air vent formed region 47 shown in FIG. 5 at each of the cornerportions of a cavity 51 in an upper mold 50. Preferably, the abuttingsurface 52 abuts a lower mold 54 to thereby support the lead frame 41 ina cavity 51. The first and second air vents 45 and 46 formed on the leadframe 41 are preferably communicated with each other with an air ventgroove 55 provided in the upper mold 50. As shown in FIG. 7(B), the airvent groove 55 is preferably located so as to cover a portion 56 of thelead frame 41 that separates the first air vent 45 from the second airvent 46. More specifically, the air vent groove 55 is preferablyconfigured to be approximately 10 μm through 50 μm in depth from theabutting surface 52. The air vent groove 55 preferably has a lengthsufficient to communicate between the first air vent 45 and the secondair vent 46, slightly overlapping the first and second air vents 45 and46. Like the upper mold 50, it is also preferable to form an air ventgroove for communicating between the first and second air vents 45 and46 on the lower mold 54.

[0069] Referring again to FIG. 7(B), the air flow inside the cavity 51,especially in the corner portions of the cavity 51 having the abuttingsurface 52 with the first and second air vents 45 and 46 formed thereon,is described below. As illustrated, at the time of plastic molding, theair and plastic that are driven towards the corner portions inside thecavity 51 can flow into the first air vent 45. At this time, since thelead frame 41 is, for example, approximately 100 μm through 250 μm inthickness, the first air vent 45 is, for example, also approximately 100μm through 250 μm in depth. Accordingly, not only the air inside thecavity 51 but also the plastic can flow into the first air vent 45 alltogether. Inside the first air vent 45, the air gathers near HL2,flowing into the second air vent 46 via the air vent groove 55 providedon the upper mold 50 or the lower mold 54. Here, the air vent groove 55is formed to have, for example, approximately 30 μm through 50 μm inwidth. As described above, since the first air vent 45 is approximately100 μm through 250 μm in depth, in reference to the first air vent 45generally no unfilled volumes are formed before the plastic cuttingsurface that constitutes the outer peripheral surface 30 in most cases.

[0070] As shown in FIG. 7(C), the manufacturing methods of the preferredembodiments can include that plastic is injected into the cavity 51using the first air vent 45 even at a gate portion 57. As illustrated,the gate portion 57 provided in the upper mold 50 is not formed todirectly follow the cavity 51, but its top portion is located on the HL2side of the first air vent 45. As shown by the arrows, this causes theplastic flowing from the gate portion 57 to flow into the cavity 51 viathe first air vent 45. As at the other corner portions, the abuttingsurface 52 of the upper mold 50 is preferably located on the uppersurface of the first air vent 45 even at the gate portion 57. As aresult, on the upper surface of the outer peripheral surface 30 (see,e.g., FIG. 3) formed successively to the side surfaces 222 and 223 ofthe insulating resin 22, substantially no or no plastic burrs 19A (seeFIG. 15(B)) are produced which are otherwise produced in the existingbackground structures, and the outer peripheral surface 30 can be formedin substantially the same or in the same plane.

[0071] That is, according to the preferred manufacturing methods, thecavity 51 can be substantially sealed with the abutting surface 52 ofthe molds 50 and 54, allowing the plastic to be injected into the cavity51 and the plastic and air to be exhausted out of the cavity 51 via thefirst air vent 45. This structure can provide significant improvementover existing background structures that have no air vent and gateportion provided on the mold successively to the cavity. This makes itpossible to form the outer peripheral surface 30 formed successively tothe aforementioned insulating resin 22 generally in the same flatsurface having substantially no or no recessed or projected portions dueto the plastic. As described above, configuring the gate portion 57 in alike manner makes it possible to form the entirety of the outerperipheral surface 30 of the side surface of the insulating resin 22generally in the same flat surface.

[0072] As shown in FIG. 8 and FIG. 9, using the aforementioned plasticencapsulation molds 50 and 54 allows the insulating resin 22 to beformed to cover the lead frame 41 for each mounting portion 42. FIG. 8is a plan view illustrating the insulating resin 22 formed on the leadframe 41. FIG. 9 is a plan view illustrating the insulating resin 22formed on the first and second air vents 45 and 46 of the mountingportion 42 shown in FIG. 8. Using the plastic encapsulation molds 50 and54 shown in FIGS. 7(A)-7(C) can cause the plastic flowing from thecavity 51 to be hardened at the first air vent 45, the air vent groove55, and at least part of the second air vent 46. Accordingly, uponremoving the package from the molds, the package is removed integrallywith the lead frame 41 and the insulating resin 22. The air inside thecavity 51 can escape outside from the second air vent 46 via the airvent groove 55 as shown by the arrows in FIG. 7(B). The manufacturingmethod according to the preferred embodiments makes it possible to,e.g., remove the air in the cavity 51 out of the portion of theoriginally insulating resin 22 formed region as shown by the dashed linein FIG. 5. As a result, an air passage having a thickness ofsubstantially that of the lead frame 41 can be reliably provided in thefirst air vent 45, forming substantially no unfilled region at the endportion of the insulating resin 22. Although not illustrated, to formthe recessed portion 25 on the reverse surface 224 of the insulatingresin 22, a projected portion corresponding to the recessed portion 25can be formed on the side of the cavity 51 in the lower mold 54.

[0073] In a fourth step, the lead frame 41 exposed on the insulatingresin 22 is preferably plated.

[0074] In this step, to inhibit leads from being oxidized and for solderwettability, the lead frame 41 can be plated. At this time, the entirelead frame 41 having a plurality of mounting portions 42 formed thereonis preferably plated. For example, a plurality of lead frames 41 can beplated at a time with the lead frames 41 or a plating assist rack foraccommodating the lead frames 41 being connected to the cathodeelectrode and with plating baths being connected to the anode electrode.At this time, prepared in the plating baths are plating solutions suchas, for example, Pd, Sn, Ni, Sn—Pb, Sn—Bi, Sn—Ag, Sn—Cu, Au—Ag, and/orSn—Ag—Cu. In addition, at least one layer of plating film can be formedon the lead frame 41 in combination of these plating solutions. To platethe lead frame 41 with a Pd solution, for example, a lead frame 41 thatis pre-plated with Pd before plastic molding can be used.

[0075] As shown in FIG. 10 and FIG. 11, in a fifth step, a plurality ofsemiconductor devices 21 formed on the lead frame 41 are preferably cutout of the lead frame 41.

[0076]FIG. 10 is a plan view illustrating a lead frame from which thefirst and second air vent formed regions have been cut away. FIG. 11(A)is a perspective view illustrating a lead frame from which the liftingleads 24 or the leads 26 are being cut away. FIG. 11(B) is a plan viewillustrating the securing region at the time of cutting the leads 26according to some preferred embodiments. As described above, first, asshown in FIG. 9, a method for manufacturing a semiconductor deviceaccording to some preferred embodiments allows the plastic flowing outof the cavity 51 to be hardened in the first air vent 45. This causessubstantially no or no plastic burrs to be produced near the insulatingresin 22 on the outer peripheral surface 30 including the lead frame 41.

[0077] Since the lead frame 41 has a thickness, for example, ofapproximately 100 μm through 250 μm, the plastic flowing out of thecavity 51 can be hardened integrally inside the first air vent 45, theair vent groove 55, and the second air vent 46. That is, the plasticinside the first and second air vents 45 and 46 can be extremelyhardened due to the thickness of the lead frame 41 to cause the plasticinside the air vent groove 55 to be integrated together. This allows theplastic flowing out of the cavity 51 to be hardened at a predeterminedposition. As a result, upon stamping the first and second air vents 45and 46, it is possible to remove substantially all or all of the plasticburrs from the lead frame 56 between the first and second air vents 45and 46. In the step of cutting the portion of the lifting leads 24, thelifting leads 24 and the plastic can be cut with the outer peripheralsurface 30 successive to the insulating resin 22 being reliably secured.That is, as shown in FIG. 3(A), since substantially no or no projectedand recessed portions are formed due to the plastic on the outerperipheral surface 30, the lifting leads 24 and the plastic 22A can bereliably secured with support means 62 (see, e.g., FIG. 11) and cut. Asillustrated, the lifting leads 24 and the plastic 22A can be cut at theimmediate end of the leads 26 on each side with the outer peripheralsurface 30 remaining uncut. With the lead frame 41 partially remainingand coupled to the first and second coupling strips 43 and 44, themounting portions 42 are not separated from the lead frame 41.

[0078] Now, as shown in FIGS. 11(A)-11(B), since the semiconductordevice 21 according to some preferred embodiments is a QFN semiconductordevice, the leads 26 are preferably cut near the boundary at which theleads 26 are exposed on the insulating resin 22. In this step, theindividual semiconductor devices 21 are preferably cut away from thelead frame 41 at the same time. As shown in FIG. 11(A), thesemiconductor device 21 having been subjected to plating can be placedon seats 59 and 60. Then, the exposed boundary portion of the leads 26in the semiconductor device 21 can be secured with the support means 62,while the tip end portion of the leads 26 can be secured with supportmeans 63. The leads 26 can be cut with a punch 64 to separate thesemiconductor device 21 from the lead frame 41.

[0079] The method for manufacturing the semiconductor device accordingto the preferred embodiments includes that upon cutting the leads 26,the punch 64 is stamped from the mounting surface of the semiconductordevice 21 to cut the leads 26 and their peripheral plastic 22A (e.g.,FIGS. 3(A)-3(B)). As shown in FIG. 3(B), by this manufacturing method, astamped surface 32 of the leads 26 can be formed on the side of themounting surface of the semiconductor device 21. On the other hand,burrs 31 of the leads 26 can be produced on the surface opposite to themounting surface of the semiconductor device 21. Some effects providedby this structure have been described above and are omitted here.Similar effects can also be obtained upon cutting the lifting leads 24since the lifting leads 24 are also cut from the mounting surface. Thatis, the semiconductor device can include a stamped surface 32 formed onthe mounting surface.

[0080] Furthermore, the method for manufacturing the semiconductordevice according to the preferred embodiments includes that upon cuttingthe lifting leads 24 and the leads 26, they are cut with the punch 64with the leads 26 being reliably secured with the support means 62. Asshown in FIG. 11(B), for example, a securing region 65 of approximately50 μm through 200 μm, which is located near the insulating resin 22after having been cut and shown by the shaded portion, can be securedwith the support means 62. As can be seen from the figure, the peripheryof the exposed region of the lifting leads 24 can also be secured. Atthis time, as described in the third step of forming the insulatingresin 22, substantially no or no projected or recessed portions areformed on the outer peripheral surface 30 successive to the sidesurfaces 222 and 223 of the insulating resin 22. In particular, asdescribed above, even in the air vent formed regions 47 (see, e.g., FIG.5) substantially no or no plastic burrs are produced on the outerperipheral surface 30 successive to the side surfaces 223 of theinsulating resin 22. Additionally, substantially no or no plastic burrsare produced on the outer peripheral surface 30 even in the gate portion57 (see e.g., FIGS. 7(A)-7(C)) for injecting plastic therethrough.Accordingly, in preferred embodiments, the plastic burrs 19A (see, e.g.,FIG. 15(B)), which would be otherwise produced in the background art,are substantially never or never formed in the region shown by a circle66. Thus, the securing region 65 located in the outer peripheral surface30 would have substantially no or no projected or recessed portionspresent thereon due to plastic burrs and would have generally the sameflat surface. As described above, with the leads 26 being reliablysecured by the support means 62, the leads 26 and their peripheralplastic 22A can be cut. As a result, the cutting surface of plastic 22Abetween the leads 26 and between the lifting leads 24 and the leads 26can be prevented from generating microcracks. They can thus be formed ina stable and substantially constant shape. Furthermore, substantially noor no microcracks grow to be crushed in the subsequent steps of testingthe properties of the semiconductor device, lapping, and mounting. Inparticular, in the mounting step, it is possible to realize asemiconductor device that will substantially never or never inducemounting deficiencies due to plastic particles or the like. It is alsopossible to improve the life cycle of the punch 64. Thereafter, thesemiconductor device 21 shown in FIG. 1 can be completed.

[0081] Thus, summarizing the aforementioned steps of some preferredembodiments, in a method for manufacturing a semiconductor deviceaccording to some preferred embodiments, a lead is used having a firstair vent 45 formed thereon across the side surfaces 223 on which thelifting leads 24 are exposed from the insulating resin 22. At the firstair vent 45 formed region, the abutting surfaces 52 of the molds 50 and54 can sandwich the lifting leads 24. This abutting surface 52 allowsplastic to be injected into the cavity 51 and the air and plastic to besubstantially exhausted from the cavity 51 only through the first airvent 45. This allows the outer peripheral surface 30 formed successivelyto the side surfaces 222 and 223 of the insulating resin 22 to havegenerally the same plane, and substantially no or no projected orrecessed portions are produced on the surface due to plastic burrs onthe surface thereof. With this structure, upon cutting the lifting leads24 and the leads 26 away from the lead frame 41, the outer peripheralsurface 30 successive to the side surfaces 222, 223 of the insulatingresin 22 can be reliably secured with the support means 62 of a cuttingjig and cut. As a result, it is possible to minimize microcracks in theplastic 22A of the outer peripheral surface 30 upon cutting, therebyminimizing mounting deficiencies of a semiconductor device 21.

[0082] In some embodiments, a method for manufacturing the semiconductordevice has been described in which two air vents are formed. However,the present invention is not limited thereto. For example, similareffects can be obtained with at least a first air vent formedsuccessively to the cavity. A pre-plated lead frame can also be used toobtain similar effects. Furthermore, other various modifications can bemade without deviating from the spirit and scope of the presentinvention.

[0083] While illustrative embodiments of the invention have beendescribed herein, the present invention is not limited to the variouspreferred embodiments described herein, but includes any and allembodiments having modifications, omissions, combinations (e.g., ofaspects across various embodiments), adaptations and/or alterations aswould be appreciated by those in the art based on the presentdisclosure. The limitations in the claims are to be interpreted broadlybased on the language employed in the claims and not limited to examplesdescribed in the present specification or during the prosecution of theapplication, which examples are to be construed as non-exclusive. Forexample, in the present disclosure, the term “preferably” isnon-exclusive and means “preferably, but not limited to.”Means-plus-function or step-plus-function limitations will only beemployed where for a specific claim limitation all of the followingconditions are present in that limitation: a) “means for” or “step for”is expressly recited; b) a corresponding function is expressly recited;and c) structure, material or acts that support that structure are notrecited.

What is claimed is:
 1. A semiconductor device, comprising at least oneisland, a semiconductor element fixedly attached to a surface of saidisland, a plurality of leads extending from the vicinity of said islandoutwardly and lifting leads extending outwardly from corner portions ofsaid island, and an insulating resin for covering said island, saidsemiconductor element, said leads, and said lifting leads integrally,wherein one end of said leads is exposed generally on the same plane asa reverse surface of said insulating resin, and the reverse surface ofsaid insulating resin has a recessed portion at least at part of aregion surrounded by an exposed surface of said leads.
 2. Thesemiconductor device according to claim 1, wherein plastic hardenedbetween said leads exposed on said insulating resin and plastic hardenedbetween said leads exposed on said insulating resin and said liftingleads have generally the same thickness as said lead frame.
 3. Thesemiconductor device according to claim 2, wherein an outer peripheralsurface defined by said leads, said lifting leads, and said hardenedplastic is formed to a side surface of said insulating resin, and saidouter peripheral surface has generally the same flat surface surroundingsaid insulating resin.
 4. The semiconductor device according to claim 1,wherein one end of said leads and one end of said lifting leads have astamped surface on a side of the reverse surface of said insulatingresin.
 5. The semiconductor device according to claim 2, wherein one endof said leads and one end of said lifting leads have a stamped surfaceon a side of the reverse surface of said insulating resin.
 6. Thesemiconductor device according to claim 3, wherein one end of said leadsand one end of said lifting leads have a stamped surface on a side ofthe reverse surface of said insulating resin.
 7. The semiconductordevice according to claim 1, wherein the reverse surface of said islandis located on a surface of said insulating resin, at least part of saidreverse surface of island is exposed on the surface of said insulatingresin, and said reverse surface of said island and the surface of saidinsulating resin form generally the same plane.
 8. The semiconductordevice according to claim 1, wherein a reverse surface of one end ofsaid lifting leads is exposed on a corner portion generally flush withthe reverse surface of said insulating resin.
 9. The semiconductordevice according to claim 8, wherein the exposed surface of said liftingleads is located outside said recessed portion and outside the exposedsurface of said leads.
 10. A semiconductor device, comprising at leastone island, a semiconductor element fixedly attached to a surface ofsaid island, a plurality of leads extending from the vicinity of saidisland outwardly and lifting leads extending outwardly from cornerportions of said island, and an insulating resin for covering saidisland, said semiconductor element, said leads, and said lifting leadsintegrally, wherein plastic hardened between said leads exposed on saidinsulating resin and plastic hardened between said leads exposed on saidinsulating resin and said lifting leads are generally the same inthickness as said lead frame.
 11. The semiconductor device according toclaim 10, wherein an outer peripheral surface defined by the surfaces ofsaid leads, said lifting leads, and said hardened plastic is formed to aside surface of said insulating resin, and said outer peripheral surfacehas generally the same flat surface surrounding said insulating resin.12. The semiconductor device according to claim 10, wherein one end ofsaid leads and one end of said lifting leads have a stamped surface on aside of the reverse surface of said insulating resin.
 13. Thesemiconductor device according to claim 11, wherein one end of saidleads and one end of said lifting leads have a stamped surface on a sideof the reverse surface of said insulating resin.
 14. The semiconductordevice according to claim 10, wherein the reverse surface of said islandis located on a surface of said insulating resin, at least part of saidreverse surface of said island is exposed on the surface of saidinsulating resin, and said reverse surface of island and the surface ofsaid insulating resin form generally the same plane.
 15. Thesemiconductor device according to claim 10, wherein a reverse surface ofone end of said lifting leads is exposed on a corner portion generallyflush with the reverse surface of said insulating resin.
 16. Thesemiconductor device according to claim 15, wherein the exposed surfaceof said lifting leads is located outside said recessed portion andoutside the exposed surface of said leads.
 17. A method formanufacturing a semiconductor device, comprising preparing a lead framehaving at least one mounting portion including at least an island,leads, and lifting leads, and fixedly attaching a semiconductor elementto the island of said lead frame, forming an insulating resin for eachmounting portion after said semiconductor element is electricallyconnected to said leads via a thin metal wire, and separating saidinsulating resin individually for each said mounting portion by cuttingsaid lead frame, wherein in said forming said insulating resin, saidlead frame located at an end portion of said insulating resin issandwiched with a plastic encapsulation mold, plastic is filled in theplastic encapsulation mold through an air vent provided on said leadframe, air and plastic are exhausted from the plastic encapsulation moldthrough an air vent provided on said lead frame, said air vent beinglocated at said sandwiched lead frame.
 18. The method for manufacturinga semiconductor device according to claim 17, wherein in the step ofseparating said insulating resin, said leads and said lifting leads arestamped from a reverse surface of said insulating resin.